features trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile pwm optimized for fast switching applications primary side switch SI7464DP vishay siliconix new product document number: 72052 s-22097?rev. a, 02-dec-02 www.vishay.com 1 n-channel 200-v (d-s) fast switching mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.24 @ v gs = 10 v 2.8 200 0.26 @ v gs = 6 v 2.7 1 2 3 4 5 6 7 8 s s s g d d d d 6.15 mm 5.15 mm powerpak so-8 bottom view n-channel mosfet g d s absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 200 gate-source voltage v gs 20 v t a = 25 c 2.8 1.8 continuous drain current (t j = 150 c) a t a = 70 c i d 2.2 1.5 continuous source current i s 3.5 1.5 a pulsed drain current i dm 8 avalanche current b i as 3 single avalanche energy b e as 0.45 mj t a = 25 c 4.2 1.8 maximum power dissipation a t a = 70 c p d 2.6 1.1 w operating junction and storage temperature range t j , t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 sec 25 30 maximum junction-to-ambient a steady state r thja 60 70 c/w maximum junction-to-case (drain) steady state r thjc 2.9 3.5 c/w notes a. surface mounted on 1? x 1? fr4 board. b. guaranteed by design, not subject to production testing.
SI7464DP vishay siliconix new product www.vishay.com 2 document number: 72052 s-22097 ? rev. a, 02-dec-02 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2 4 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 160 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 160 v, v gs = 0 v, t j = 55 c 5 a on-state drain current a i d(on) v ds 5 v, v gs = 10 v 8 a a v gs = 10 v, i d = 2.8 a 0.195 0.24 drain-source on-state resistance a r ds(on) v gs = 6 v, i d = 2.7 a 0.210 0.26 forward transconductance a g fs v ds = 15 v, i d = 2.8 a 8 s diode forward voltage a v sd i s = 3.5 a, v gs = 0 v 0.8 1.2 v dynamic b total gate charge q g 12 18 gate-source charge q gs v ds = 100 v, v gs = 10 v, i d = 2.8 a 2.5 nc gate-drain charge q gd 3.8 gate-resistance r g 2.5 turn-on delay time t d(on) 10 15 rise time t r v dd = 100 v, r l = 100 12 20 turn-off delay time t d(off) v dd = 100 v, r l = 100 i d 1 a, v gen = 10 v, r g = 6 15 25 ns fall time t f 15 25 source-drain reverse recovery time t rr i f = 3.5 a, di/dt = 100 a/ s 60 90 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 2 4 6 8 0123456 0 2 4 6 8 02468 v gs = 10 thru 5 v 25 c t c = 150 c 4 v -55 c 3 v output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d
SI7464DP vishay siliconix new product document number: 72052 s-22097 ? rev. a, 02-dec-02 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.1 0.2 0.3 0.4 02468 0 2 4 6 8 10 036912 0.0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 0 200 400 600 800 0 20406080 c rss c oss c iss v ds = 100 v i d = 2.8 a v gs = 10 v i d = 2.8 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) v ds - drain-to-source voltage (v) c - capacitance (pf) v gs - on-resistance ( r ds(on) ) i d - drain current (a) capacitance on-resistance vs. junction temperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v gs = 6 v 0.0 0.1 0.2 0.3 0.4 0.5 0246810 i d = 2.8 a on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v gs - gate-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 t j = 150 c t j = 25 c 10 0.1 source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s 1
SI7464DP vishay siliconix new product www.vishay.com 4 document number: 72052 s-22097 ? rev. a, 02-dec-02 typical characteristics (25 c unless noted) -1.2 -0.8 -0.4 0.0 0.4 0.8 -50 -25 0 25 50 75 100 125 150 i d = 250 a threshold voltage variance (v) v gs(th) t j - temperature ( c) 10 -3 10 -2 1 10 600 10 -1 10 -4 100 0.001 0 1 50 20 30 10 600 0.1 single pulse power time (sec) 10 40 power (w) 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 58 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100 safe operating area v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 1000 0.001 1 t a = 25 c single pulse - drain current (a) i d p(t) = 10 dc 0.01 i dm limited i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 p(t) = 0.0001 0.01 100
SI7464DP vishay siliconix new product document number: 72052 s-22097 ? rev. a, 02-dec-02 www.vishay.com 5 10 -3 10 -2 1 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.02
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